Device Technology Research & Development Center

In order to realize the most advanced memory products, it is necessary to develop new memory cell materials, structures, and devices such as transistors to operate peripheral circuits, as well as process integration technology, circuit design technology and TCAD technology.

The Device Technology Research & Development Center develops these technologies and utilizes them to develop next-generation file memory with even higher density or new nonvolatile memories such as storage-class memory. It also develops simulation programs and applies them to actual devices. It creates the concepts of brand-new memories and develops memory circuit design technology based on the concepts and designs prototype products. It also performs fundamental research of materials and structures for new memories that have yet to see the light of day, based on new concepts and physical phenomena, with a 10-year time horizon.

Device Technology

Location

  • Yokkaichi Plant  (Yokkaichi City, Mie Prefecture, Japan)
  • Yokohama Technology Campus (Yokohama City, Kanagawa Prefecture, Japan)
  • Komukai Suboffice of the Yokohama Technology Campus (Kawasaki City, Kanagawa Prefecture, Japan)
  • Suboffice of the Yokohama Technology Campus at the Semiconductor System Technology Center

Technology Topics

新規メモリ開発

New memory development

テラビット級の高集積を目指すイオンメモリ

New Memory Cell Technology for Terabit-Scale High-Density Application

テラビット級の高集積を目指すイオンメモリ

Demonstration of Surrounding gate 3D-Vertical-Channel Transistor Using In-Al-Zn Oxide Channel with Gate Length of 40nm

Twin BiCS FLASH ~3次元フラッシュメモリの更なる大容量化を実現する半円型構造セル~

3D Semicircular Flash Memory Cell (Twin BiCS FLASH): Novel Split-Gate Technology to Boost Bit Density

TCAD技術開発

TCAD (Technology CAD) development

ナノ材料の評価技術

New Evaluation Method for Nanomaterials

ナノ材料の評価技術

Development of Monocrystalline Si Channel Process for 3D Flash Memory