Research papers

* All authors at submission are basically our company's employees. Written in English.

Post Training Weight Compression with Distribution-based Filter-wise Quantization Step

• S. Sasaki, et al.
• IEEE Symposium on Low-Power and High-Speed Chips and Systems, COOL CHIPS 2019 - Proceedings 8721356

Ag Ionic Memory Cell Technology for Terabit-Scale High-Density Application

• S. Fujii, et al.
• IEEE Symposium on VLSI Technology, Digest of Technical Papers, pp. TT189-TT190
  

Overview in Three-Dimensionally Arrayed Flash Memory Technology

• R. Katsumata
• IEEE Symposia on VLSI Technology and Circuits, Short Course 1

A 12.8-Gb/s Daisy Chain-Based Downlink I/F Employing Spectrally Compressed Multi-Band Multiplexing for High-Bandwidth, Large-Capacity Storage Systems

• Y. Tsubouchi, et al.
• IEEE Journal of Solid-State Circuits, 54(4),8613011, pp. 1086-1095

Live demonstration: FPGA-based CNN accelerator with filter-wise-optimized bit precision

• K. Nakata, et al.
• Proceedings - IEEE International Symposium on Circuits and Systems, 2019-May, 8702208

Circuit-size reduction for parallel chien search using minimal polynomial degree reduction

• N. Kokubun, et al.
• Proceedings - IEEE International Symposium on Circuits and Systems, 2019-May, 8702075

Grain-boundary-limited carrier mobility in polycrystalline silicon with negative temperature dependence: Modeling carrier conduction through grain-boundary traps based on trap-assisted tunneling

• M. Hogyoku, et al.
• Japanese Journal of Applied Physics, 58(SB), SBBA01

Comprehensive study of variability in poly-Si channel nanowire transistor

• K. Ota, et al.
• Japanese Journal of Applied Physics, 58(SB), SBBA06

Evaluation of electron traps in SiN x by discharge current transient spectroscopy: Verification of validity by comparing with conventional DLTS

• H. Seki, et al.
• Japanese Journal of Applied Physics, 58(SB), SBBK02

High mobility (>30 cm² V^-1 s^-1) and low source/drain parasitic resistance In-Zn-O BEOL transistor with ultralow <10-20 A μm^-1 off-state leakage current

• N. Saito, et al.
• Japanese Journal of Applied Physics, 58(SB), SBBJ07

Investigation of Switching-Induced Local Defects in Oxide-Based CBRAM Using Expanded Analytical Model of TDDB

• R. Ichihara, et al.
• IEEE Transactions on Electron Devices, 66(5), 8676360, pp. 2165-2171

A 25.6Gb/s Uplink-Downlink Interface Employing PAM-4-Based 4-Channel Multiplexing and Cascaded CDR Circuits in Ring Topology for High-Bandwidth and Large-Capacity Storage Systems

• T. Toi, et al.
• Digest of Technical Papers - IEEE International Solid-State Circuits Conference, pp. 478 - 480

Device Challenges and Opportunities for ReRAM

• K. Ota
• IEEE International Reliability Physics Symposium, IRPS 2019 - Tutorial

3D Flash Memory - Electrical and Physical Characterizations for Memory Cell Reliability -

• Y. Mitani
• IEEE International Conference on Microelectronic Test Structures, ICMTS 2019 - Tutorial

* All authors at submission are basically our company's employees. Written in English.

FPGA-Based CNN Processor with Filter-Wise-Optimized Bit Precision

• A. Maki, et al.
• Proceedings of 2018 IEEE Asian Solid-State Circuits Conference (A-SSCC2018) pp.47-50

Non-Volatile Memory for Data Age

• K. Ishimaru
• Proceedings of the International Conference on Solid-State and Integrated Technology 2018 (ICSICT-2018) pp. 1215-1218

Formation Mechanism of Sidewall Striation in High-Aspect-Ratio Hole Etching

• M. Omura, et al.
• 40th International Symposium on Dry Process (DPS2018), H-2, pp. 293-294

Footprints of RF CMOS Compact Modeling Technology from Wireless Communication to IoT Applications

• S. Yoshitomi
• Proceedings of 25th International Conference Mixed Design of Integrated Circuits and Systems, MIXDES 2018, 8436911, pp. 22-28

Evaluation of Electron Traps in SiN by Discharging Current Transient Spectroscopy: Verification of Validity by Comparing with Conventional DLTS

• H. Seki, et al.
• 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.325-326

High mobility (>30 cm²/Vs) and Low S/D Parasitic Resistance In-Zn-O BEOL Transistor with Ultralow (<10^-20 A/μm) Off Leakage Current

• N. Saito, et al.
• 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.573-574

Performance improvement by template-induced crystallization in ferroelectric HfO₂ tunnel junction memory for cross-point high-density application

• S. Kabuyanagi, et al.
• 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.205-206

Effect of Tin and Gallium Composition on the Instability of Amorphous Indium-Gallium-Zinc-Tin-Oxide (IGZTO) Thin-Film Transistors under Positive Gate Bias

• D. Zhao, et al.
• 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.805-806 (Late News)

Grain-Boundary-Limited Polycrystalline-Silicon Mobility with Negative Temperature Dependence ~ Modeling of Carrier Conduction through Grain-Boundary Traps Based on Trap-Assisted Tunneling ~

• M. Hogyoku, et al.
• 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp. 825-826

Stacked Source/Drain Electrode Structure of InGaZnO Thin-Film-Transistor for Low Contact Resistance and Suppressing Channel Shortening Effect

• J. Kataoka, et al.
• 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.1269-1270 (Late News)

Comprehensive Study of Variability in Poly-Si Channel Nanowire Transistor ~ Grain Boundary effect in Variability ~

• K. Ota, et al.
• 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.235-236 (Late News)

Emerging Non-Volatile Memory and Thin-Film Transistor Technologies for Future 3D-LSI (Invited)

• M. Saitoh, et al.
• 48^th European Solid-State Device Research Conference (ESSDERC) 2018, pp.138-141

Performance and Reliability of Ferroelectric HfO₂ Tunnel Junction Memory (Invited)

• S. Fujii, et al.
• 2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference (IFAAP2018)

Reliability of HfO₂-based Ferroelectric Tunnel Junction Memory (Invited)

• M. Yamaguchi, et al.
• Non-Volatile Memory Technology Symposium 2018 (NVMTS2018)

A 12.8 Gb/s Daisy Chain-Based Downlink I/F Employing Spectrally Compressed Multi-Band Multiplexing for High-Bandwidth and Large-Capacity Storage Systems

• Y. Tsubouchi, et al.
• IEEE Symposium on VLSI Circuits, Digest of Technical Papers, pp. 149-150

Suppression of channel shortening effect for InGaZnO Thin-Film-Transistor by In-Sn-O source/drain electrodes

• J. Kataoka, et al.
• 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings 8421427, pp. 175-177

Origin of High Mobility in InSnZnO MOSFETs

• N. Saito, et al.
• 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 -Proceedings 8421530, pp. 172-174

3D Flash Memory for Data-Intensive Applications

• S. Inaba
• 2018 IEEE 10th International Memory Workshop, IMW 2018 pp. 1-4

Comprehensive investigation on parameter extraction methodology for short channel amorphous-InGaZnO thin-film transistor

• C. Tanaka, et al.
• IEEE International Conference on Microelectronic Test Structures 2018-March, pp. 23-26

Cooperative simulation of lithography and topography for three-dimensional high-aspect-ratio etching

• T. Ichikawa, et al.
• Japanese Journal of Applied Physics 57(6), 06JC01

Multiscale modeling for SiO₂ atomic layer deposition for high-aspect-ratio hole patterns

• Y. Miyano, et al.
• Japanese Journal of Applied Physics 57(6), 06JB03

Hot carrier degradation, TDDB, and 1/f noise in Poly-Si Tri-gate nanowire transistor

• Y. Yoshimura, et al.
• IEEE International Reliability Physics Symposium Proceedings 2018-March, pp. 5A.61-5A.66

Density-functional study on the dopant-segregation mechanism: Chemical potential dependence of dopant-defect complex at Si/SiO₂ interface

• H. Kawai, et al.
• Journal of Applied Physics 123(16), 161425

Charge-based Neuromorphic Cell by InGaZnO Transistor and Implementation of Simple Scheme Spike-Timing-Dependent Plasticity

• C. Tanaka, et al.
• Proceedings - IEEE International Symposium on Circuits and Systems 2018-May, 8350932

Hotspot detection based on surrounding optical feature

• Y. Abe, et al.
• Proceedings of SPIE - The International Society for Optical Engineering 10588, 105880I

Updates of nanoimprint lithography for production and applications for next generation memory devices

• T. Higashiki
• Proceedings of SPIE - The International Society for Optical Engineering 10584, 105840T

Origin of high mobility in InSnZnO MOSFETs

• N. Saito, et al.
• IEEE Journal of the Electron Devices Society 6,8546783, pp. 1258-1262

* All authors at submission are basically our company's employees. Written in English.

Study of CO₂ ashing for porous SiOCH film using 100 MHz/13.56 MHz dual frequency superimposed capacitive coupled plasma

• T. Imamura, et al.
• Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics 35(6), 062201

Development of an Energy-Saving Controller for Sub Apparatus

• T. Ozaki
• IEEE Transactions on Semiconductor Manufacturing 30(4), 8057857, pp. 367-370

Metrology and inspection required for next generation lithography

• M. Asano, et al.
• Japanese Journal of Applied Physics 56(6), 06GA01

Application of EB repair for nanoimprint lithography template

• A, Kumada, et al.
• Proceedings of SPIE - The International Society for Optical Engineering 10454, 104540Q

Accurate lithography simulation model based on convolutional neural networks

• Y. Watanabe, et al.
• Proceedings of SPIE - The International Society for Optical Engineering 10454, 104540I

DUV inspection beyond optical resolution limit for EUV mask of hp 1X nm

• M. Naka, et al.
• Proceedings of SPIE - The International Society for Optical Engineering 10451, 104510K

Multi-scale modeling for SiO2 plasma-enhanced atomic layer deposition at high-aspect-ratio hole patterns

• Y. Miyano, et al.
• 39th International Symposium on Dry Process (DPS2017), B-3, pp. 19-20