研究論文

2019年 主要学会発表・パブリケーションリスト

※:投稿時点で原則著者全員が当社従業員の学会発表・論文

Ag Ionic Memory Cell Technology for Terabit-Scale High-Density Application
  • S. Fujii, et al.
  • IEEE Symposium on VLSI Technology, Digest of Technical Papers, pp. TT189-TT190
Overview in Three-Dimensionally Arrayed Flash Memory Technology
  • R. Katsumata
  • IEEE Symposia on VLSI Technology and Circuits, Short Course 1
A 12.8-Gb/s Daisy Chain-Based Downlink I/F Employing Spectrally Compressed Multi-Band Multiplexing for High-Bandwidth, Large-Capacity Storage Systems
  • Y. Tsubouchi, et al.
  • IEEE Journal of Solid-State Circuits, 54(4),8613011, pp. 1086-1095
Live demonstration: FPGA-based CNN accelerator with filter-wise-optimized bit precision
  • K. Nakata, et al.
  • Proceedings - IEEE International Symposium on Circuits and Systems, 2019-May, 8702208
Circuit-size reduction for parallel chien search using minimal polynomial degree reduction
  • N. Kokubun, et al.
  • Proceedings - IEEE International Symposium on Circuits and Systems, 2019-May, 8702075
Grain-boundary-limited carrier mobility in polycrystalline silicon with negative temperature dependence: Modeling carrier conduction through grain-boundary traps based on trap-assisted tunneling
  • M. Hogyoku, et al.
  • Japanese Journal of Applied Physics, 58(SB), SBBA01
Comprehensive study of variability in poly-Si channel nanowire transistor
  • K. Ota, et al.
  • Japanese Journal of Applied Physics, 58(SB), SBBA06
Evaluation of electron traps in SiN x by discharge current transient spectroscopy: Verification of validity by comparing with conventional DLTS
  • H. Seki, et al.
  • Japanese Journal of Applied Physics, 58(SB), SBBK02
High mobility (>30 cm2 V-1 s-1) and low source/drain parasitic resistance In-Zn-O BEOL transistor with ultralow <10-20 A μm-1 off-state leakage current
  • N. Saito, et al.
  • Japanese Journal of Applied Physics, 58(SB), SBBJ07
Investigation of Switching-Induced Local Defects in Oxide-Based CBRAM Using Expanded Analytical Model of TDDB
  • R. Ichihara, et al.
  • IEEE Transactions on Electron Devices, 66(5), 8676360, pp. 2165-2171
A 25.6Gb/s Uplink-Downlink Interface Employing PAM-4-Based 4-Channel Multiplexing and Cascaded CDR Circuits in Ring Topology for High-Bandwidth and Large-Capacity Storage Systems
  • T. Toi, et al.
  • Digest of Technical Papers - IEEE International Solid-State Circuits Conference, pp. 478 - 480

2018年 主要学会発表・パブリケーションリスト

※:投稿時点で原則著者全員が当社従業員の学会発表・論文

プラズマが拓く半導体プロセスの未来 (依頼講演)
  • 栗原一彰
  • プラズマ・核融合学会 九州・沖縄・山口支部 第22回支部大会 研究発表 論文集、p.13
FPGA-Based CNN Processor with Filter-Wise-Optimized Bit Precision
  • A. Maki, et al.
  • Proceedings of 2018 IEEE Asian Solid-State Circuits Conference (A-SSCC2018) pp.47-50
Non-Volatile Memory for Data Age
  • K. Ishimaru
  • Proceedings of the International Conference on Solid-State and Integrated Technology 2018 (ICSICT-2018) pp. 1215-1218
Formation Mechanism of Sidewall Striation in High-Aspect-Ratio Hole Etching
  • M. Omura, et al.
  • 40th International Symposium on Dry Process (DPS2018), H-2, pp. 293-294
Footprints of RF CMOS Compact Modeling Technology from Wireless Communication to IoT Applications
  • S. Yoshitomi
  • Proceedings of 25th International Conference Mixed Design of Integrated Circuits and Systems, MIXDES 2018, 8436911, pp. 22-28
Evaluation of Electron Traps in SiN by Discharging Current Transient Spectroscopy: Verification of Validity by Comparing with Conventional DLTS
  • H. Seki, et al.
  • 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.325-326
High mobility (>30 cm2/Vs) and Low S/D Parasitic Resistance In-Zn-O BEOL Transistor with Ultralow (<10-20 A/μm) Off Leakage Current
  • N. Saito, et al.
  • 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.573-574
Performance improvement by template-induced crystallization in ferroelectric HfO2 tunnel junction memory for cross-point high-density application
  • S. Kabuyanagi, et al.
  • 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.205-206
Effect of Tin and Gallium Composition on the Instability of Amorphous Indium-Gallium-Zinc-Tin-Oxide (IGZTO) Thin-Film Transistors under Positive Gate Bias
  • D. Zhao, et al.
  • 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.805-806 (Late News)
Grain-Boundary-Limited Polycrystalline-Silicon Mobility with Negative Temperature Dependence ~ Modeling of Carrier Conduction through Grain-Boundary Traps Based on Trap-Assisted Tunneling ~
  • M. Hogyoku, et al.
  • 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp. 825-826
Stacked Source/Drain Electrode Structure of InGaZnO Thin-Film-Transistor for Low Contact Resistance and Suppressing Channel Shortening Effect
  • J. Kataoka, et al.
  • 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.1269-1270 (Late News)
Comprehensive Study of Variability in Poly-Si Channel Nanowire Transistor ~ Grain Boundary effect in Variability ~
  • K. Ota, et al.
  • 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.235-236 (Late News)
Emerging Non-Volatile Memory and Thin-Film Transistor Technologies for Future 3D-LSI (Invited)
  • M. Saitoh, et al.
  • 48th European Solid-State Device Research Conference (ESSDERC) 2018, pp.138-141
Performance and Reliability of Ferroelectric HfO2 Tunnel Junction Memory (Invited)
  • S. Fujii, et al.
  • 2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference (IFAAP2018)
Reliability of HfO2-based Ferroelectric Tunnel Junction Memory (Invited)
  • M. Yamaguchi, et al.
  • Non-Volatile Memory Technology Symposium 2018 (NVMTS2018)
A 12.8 Gb/s Daisy Chain-Based Downlink I/F Employing Spectrally Compressed Multi-Band Multiplexing for High-Bandwidth and Large-Capacity Storage Systems
  • Y. Tsubouchi, et al.
  • IEEE Symposium on VLSI Circuits, Digest of Technical Papers, pp. 149-150
Suppression of channel shortening effect for InGaZnO Thin-Film-Transistor by In-Sn-O source/drain electrodes
  • J. Kataoka, et al.
  • 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings 8421427, pp. 175-177
Origin of High Mobility in InSnZnO MOSFETs
  • N. Saito, et al.
  • 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 -Proceedings 8421530, pp. 172-174
3D Flash Memory for Data-Intensive Applications
  • S. Inaba
  • 2018 IEEE 10th International Memory Workshop, IMW 2018 pp. 1-4
Comprehensive investigation on parameter extraction methodology for short channel amorphous-InGaZnO thin-film transistor
  • C. Tanaka, et al.
  • IEEE International Conference on Microelectronic Test Structures 2018-March, pp. 23-26
Cooperative simulation of lithography and topography for three-dimensional high-aspect-ratio etching
  • T. Ichikawa, et al.
  • Japanese Journal of Applied Physics 57(6), 06JC01
Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns
  • Y. Miyano, et al.
  • Japanese Journal of Applied Physics 57(6), 06JB03
Hot carrier degradation, TDDB, and 1/f noise in Poly-Si Tri-gate nanowire transistor
  • Y. Yoshimura, et al.
  • IEEE International Reliability Physics Symposium Proceedings 2018-March, pp. 5A.61-5A.66
Density-functional study on the dopant-segregation mechanism: Chemical potential dependence of dopant-defect complex at Si/SiO2 interface
  • H. Kawai, et al.
  • Journal of Applied Physics 123(16), 161425
Charge-based Neuromorphic Cell by InGaZnO Transistor and Implementation of Simple Scheme Spike-Timing-Dependent Plasticity
  • C. Tanaka, et al.
  • Proceedings - IEEE International Symposium on Circuits and Systems 2018-May, 8350932
Hotspot detection based on surrounding optical feature
  • Y. Abe, et al.
  • Proceedings of SPIE - The International Society for Optical Engineering 10588, 105880I
Updates of nanoimprint lithography for production and applications for next generation memory devices
  • T. Higashiki
  • Proceedings of SPIE - The International Society for Optical Engineering 10584, 105840T
Origin of high mobility in InSnZnO MOSFETs
  • N. Saito, et al.
  • IEEE Journal of the Electron Devices Society 6,8546783, pp. 1258-1262
3D Flash MemoryにおけるALD技術の応用
  • 相宗 史記
  • 化学工学会 CVD反応分科会主催第28回シンポジウム 「アトミックレイヤープロセッシングの基礎と最新技術動向」, 2018年6月4日

2017年 主要学会発表・パブリケーションリスト

※:投稿時点で原則著者全員が当社従業員の学会発表・論文

Study of CO2 ashing for porous SiOCH film using 100 MHz/13.56 MHz dual frequency superimposed capacitive coupled plasma
  • T. Imamura, et al.
  • Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics 35(6), 062201
Development of an Energy-Saving Controller for Sub Apparatus
  • T. Ozaki
  • IEEE Transactions on Semiconductor Manufacturing 30(4), 8057857, pp. 367-370
機械学習で切り開く新しいリソグラフイ・DFM 技術(招待講演)
  • 松縄 哲明
  • 信学技報, vol. 117, no. 273, VLD2017-50, pp. 131-131, 2017年11月
Metrology and inspection required for next generation lithography
  • M. Asano, et al.
  • Japanese Journal of Applied Physics 56(6), 06GA01
Application of EB repair for nanoimprint lithography template
  • A, Kumada, et al.
  • Proceedings of SPIE - The International Society for Optical Engineering 10454, 104540Q
Accurate lithography simulation model based on convolutional neural networks
  • Y. Watanabe, et al.
  • Proceedings of SPIE - The International Society for Optical Engineering 10454, 104540I
DUV inspection beyond optical resolution limit for EUV mask of hp 1X nm
  • M. Naka, et al.
  • Proceedings of SPIE - The International Society for Optical Engineering 10451, 104510K
Multi-scale modeling for SiO2 plasma-enhanced atomic layer deposition at high-aspect-ratio hole patterns
  • Y. Miyano, et al.
  • 39th International Symposium on Dry Process (DPS2017), B-3, pp. 19-20

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