Address 800 Yamanoisshiki-cho, Yokkaichi-shi, Mie Prefecture 512-8550, Japan
Site area 694,000m2 (not including parking space)
Founded January 1992
Employees Approx. 6,300 (As of March 31, 2021)
Main products Semiconductor memory devices (NAND flash memory, etc.)
Certification ISO 14001: Acquired in February 1996 and most recently renewed in March 2018
(registration number: EC17J0025)
ISO 9001: Acquired in December 2001 and most recently renewed in December 2019
(registration number: JQA-QMA14628)
ISO45001:Acquired in March 2019 and most recently renewed in January 2021
(registration number:WC18J0004)

History of the Yokkaichi Plant

Yokkaichi Plant at the Time of its Founding (in 1992)

Yokkaichi Plant at the Time of its Founding (in 1992)

Current Yokkaichi Plant (in 2020)

Current Yokkaichi Plant (in 2020)

Plant History Year Product History
  1987
Invented the world's first NAND Flash memory

  1991 Commercialized the world's first 4Mbit NAND Flash memory
Constructed Yokkaichi Plant 1992  
Commenced operation of Fab 1 1993  
Commenced operation of Fab 2 1996  
  2000 Commercialized SD memory cards
Commenced operation of Fab 3
2005  
Commenced operation of Fab 4 2007
Announced the world’s first 3D Flash memory technology

Commenced operation of Fab 5 (Phase 1) 2011  
Commenced operation of Fab 5 (Phase 2) 2014 Commercialized the world’s first 15nm NAND Flash memory
  2015 Commercialized a 48-layer BiCS FLASH™ 3D Flash memory with the world's highest density
Commenced operation of New Fab 2 2016 Created a prototype of a 64-layer BiCS FLASH™ 3D Flash memory with the world’s highest density
  2017
Prototyped a 96-layer BiCS FLASH™ 3D Flash memory

Commenced operation of Fab 6 2018 Inaugurated the Memory Development Center
  2019 Developed XL-FLASH, a storage-class memory