Address | 800 Yamanoisshiki-cho, Yokkaichi-shi, Mie Prefecture 512-8550, Japan |
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Site area | 694,000m2 (not including parking space) |
Founded | January 1992 |
Employees | Approx. 6,900 (As of March 31, 2022) |
Main products | Semiconductor memory devices (NAND flash memory, etc.) |
Certification | ISO 14001: Acquired in February 1996 and most recently renewed in March 2018 (registration number: EC17J0025) |
ISO 9001: Acquired in December 2001 and most recently renewed in December 2019 (registration number: JQA-QMA14628) |
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ISO45001:Acquired in March 2019 and most recently renewed in January 2021 (registration number:WC18J0004)
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History of the Yokkaichi Plant
History of the Yokkaichi Plant

Yokkaichi Plant at the Time of its Founding (in 1992)

Current Yokkaichi Plant (in 2020)
Plant History | Year | Product History |
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1987 | Invented the world's first NAND Flash memory
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1991 | Commercialized the world's first 4Mbit NAND Flash memory | |
Constructed Yokkaichi Plant | 1992 | |
Commenced operation of Fab 1 | 1993 | |
Commenced operation of Fab 2 | 1996 | |
2000 | Commercialized SD memory cards | |
Commenced operation of Fab 3 |
2005 | |
Commenced operation of Fab 4 | 2007 | Announced the world’s first 3D Flash memory technology
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Commenced operation of Fab 5 (Phase 1) | 2011 | |
Commenced operation of Fab 5 (Phase 2) | 2014 | Commercialized the world’s first 15nm NAND Flash memory |
2015 | Commercialized a 48-layer BiCS FLASH™ 3D Flash memory with the world's highest density | |
Commenced operation of New Fab 2 | 2016 | Created a prototype of a 64-layer BiCS FLASH™ 3D Flash memory with the world’s highest density |
2017 | Prototyped a 96-layer BiCS FLASH™ 3D Flash memory
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Commenced operation of Fab 6 | 2018 | Inaugurated the Memory Development Center |
2019 | Developed XL-FLASH, a storage-class memory |
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